Development of Cu/STO/p+-Si Self-Rectifying Memristors with High Rectification Ratio and Endurance

The continuous advancement of technology demands improved computer system performance while minimizing energy consumption. Memory-based crossbar array architectures are recognized for their potential to address these challenges due to their low power consumption and fast switching capabilities. However, the sneak-path current effect in these arrays significantly impacts system operation. Self-rectifying memory devices have been identified as a crucial solution to this issue. In this study, Cu/STO/p⁺-Si self-rectifying memory devices were fabricated using RF sputtering, and the carrier transport mechanisms were analyzed. The analysis revealed that Fowler-Nordheim tunneling dominates in the positive bias region, while Schottky emission governs the negative bias region, endowing the devices with self-rectifying characteristics. Subsequent device measurements demonstrated a rectification ratio exceeding 3×10⁵, a memory window of 10⁵, and endurance of over 5500 cycles. The Cu/STO/p⁺-Si self-rectifying devices developed in this study show great potential for future high-density embedded storage applications.